Martin Ek
Titel
doktorand
Organisation
046-2228112
Martin [dot] Ek [at] chem [dot] lu [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2013
- 2012
- Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
- Continuous gas-phase synthesis of nanowires with tunable properties.
- Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
- Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
- Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
- Electron Trapping in InP Nanowire FETs with Stacking Faults
- Electron Trapping in InP Nanowire FETs with Stacking Faults.
- GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
- Heterointerface Control in III-V Semiconductor Nanowires
- High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
- Single InAs/GaSb Nanowire Low-Power CMOS Inverter
- Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si001 Substrate and Their Enhanced Light Scattering
- 2011
- Degenerate p-doping of InP nanowires for large area tunnel diodes
- Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
- Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
- GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence
- High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
- Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
- Transmission Electron Microscopy of Nanowires: Influence of Doping and Etching on Polytypism in InP
- Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
- 2010
- 2005
