Sofia Johansson
Titel
Doktorand
Organisation
046-2229099
Sofia [dot] Johansson [at] eit [dot] lth [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2012
- A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
- High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
- Highly controlled InAs nanowires on Si(111) wafers by MOVPE
- Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- 2011
- 2010
