Lars-Erik Wernersson
Titel
Professor
Organisation
046-2229003
Lars-Erik [dot] Wernersson [at] eit [dot] lth [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2013
- 2012
- 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
- Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
- Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
- Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
- Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
- Growth of InAs/InP core-shell nanowires with various pure crystal structures.
- High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
- High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- High-Performance InAs Nanowire MOSFETs
- High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
- Highly controlled InAs nanowires on Si(111) wafers by MOVPE
- In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- Performance Evaluation of III–V Nanowire Transistors
- Single InAs/GaSb Nanowire Low-Power CMOS Inverter
- Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
- Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- 2011
- 15 nm diameter InAs nanowire MOSFETs
- 60 GHz impulse radio measurements
- Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
- Design of RF Properties for Vertical Nanowire MOSFETs
- Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
- Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
- GaSb nanowire single-hole transistor
- High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- High quality InAs and GaSb thin layers grown on Si (111)
- Impulse-based 4 Gbit/s radio link at 60 GHz
- InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
- Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
- Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
- Inverter circuits based on vertical InAs nanowire MOSFETs
- RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
- Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Temperature and annealing effects on InAs nanowire MOSFETs
- Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
- Transient studies on InAs/HfO2 nanowire capacitors
- Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- 2010
- 60 GHz Wavelet Generator for Impulse Radio Applications
- A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
- A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
- Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
- Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
- Analysis of InAs/HfO2 nanowire CV characteristics
- Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
- Coherent V-Band Pulse Generator for Impulse Radio BPSK
- Correlation-induced conductance suppression at level degeneracy in a quantum dot.
- Doping Incorporation in InAs nanowires characterized by capacitance measurements
- Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
- High Frequency Performance of Vertical InAs Nanowire MOSFET
- High-k oxides on (100), (111)A and (111)B InAs substrates
- III-V Nanowires-Extending a Narrowing Road
- InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
- InAs/GaSb heterostructure nanowires for tunnel FETs
- Low-frequency noise in vertical InAs nanowire FETs
- Modelling and optimization of III/V transistors with matrices of nanowires
- Oscillator for 60 GHz Super Regenerative Receiver
- Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
- Temperature dependent properties of InSb and InAs nanowire field-effect transistors
- Tunneling-based devices and circuits
- Vertical InAs nanowire wrap gate transistors for integration on a Si platform
- Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
- 2009
- 20 GHz Wavelet Generator Using a Gated Tunnel Diode
- 20 GHz gated tunnel diode based UWB pulse generator
- 60 GHz Ultra-Wideband Impulse Radio Transmitter
- 60 GHz Wavelet Generator for Impulse Radio Applications
- Band Structure Effects on the Scaling Properties of 111 InAs Nanowire MOSFETs
- Deposition of HfO2 on InAs by atomic-layer deposition
- Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
- Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
- Gated tunnel diode in oscillator applications with high frequency tuning
- Giant, level-dependent g factors in InSb nanowire quantum dots.
- Growth of vertical InAs nanowires on heterostructured substrates
- InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
- MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
- 2008
- Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
- Characterization of GaSb nanowires grown by MOVPE
- Development of a Vertical Wrap-Gated InAs FET
- Drive current and threshold voltage control in vertical InAs wrap-gate transistors
- GaAs/GaSb nanowire heterostructures grown by MOVPE
- Gated tunnel diode pulse generator
- Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
- Heterogeneous integration of InAs on W/GaAs by MOVPE
- Heterostructure Barriers in Wrap Gated Nanowire FETs
- High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
- III/V Nanowire FETs for CMOS?
- InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
- InAs nanowire metal-oxide-semiconductor capacitors
- Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
- Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
- Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
- 2007
- 2006
- Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
- InAs wrap-gate FETs
- InAsP/InAs nanowire heterostructure field effect transistors
- Nanowire field effect transistor
- Nanowire transistors: fabrication, performance and applications
- Vertical InAs nanowire wrap-gate FETs
- Vertical high mobility wrap-gated InAs nanowire transistors
- Vertical high-mobility wrap-gated InAs nanowire transistor
- Vertical wrap-gated nanowire transistors
- 2005
- A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
- Gated tunnel diodes in nanoelectronic pulse generators
- InAs epitaxial lateral overgrowth of W masks
- MOVPE of InAs epitaxial overgrowth of W masks
- Vertical high mobility wrap-gated InAs nanowire transistor
- Wrap-gated InAs nanowire field effect transistor
- Wrap-gated InAs nanowire field-effect transistor
- 2004
- 3D metal-semiconductor devices and other nanoelectronic devices
- Design of resonant tunneling permeable base transistors
- Nanoelectronic pulse generators based on gated resonant tunnelling diodes
- Nanoelectronic pulse generators for UWB applications
- Resonant tunneling permeable base transistor based pulsed oscillator
- Resonant tunneling permeable base transistor based pulsed oscillator
- Resonant tunneling permeable base transistors with high transconductance
- SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
- 2003
- Highly functional tunnelling devices integrated in 3D
- InP hot electron transistors with a buried metal gate
- Resonant Tunneling Permeable Base Transistor for RF applications
- Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
- Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
- Tunneling spectroscopy of a quantum dot through a single impurity
- 2002
- A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
- A resonant tunneling permeable base transistor with Al-free tunneling barriers
- A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
- Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
- Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
- Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
- Circuits and devices with integrated VFETs and RTDs
- Coupling between lateral modes in a vertical resonant tunneling structure
- Designed emitter states in resonant tunneling through quantum dots
- Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
- Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
- Nanoscale tungsten aerosol particles embedded in GaAs
- Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
- Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
- Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
- Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
- Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
- Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
- Three-dimensional integrated resonant tunneling transistor with multiple peaks
- 1998
