Anil Dey
Titel
Doktorand
Organisation
046-2224560
Anil [dot] Dey [at] eit [dot] lth [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2013
- 2012
- Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
- High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- High-Performance InAs Nanowire MOSFETs
- High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
- Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- Single InAs/GaSb Nanowire Low-Power CMOS Inverter
- 2011
- 15 nm diameter InAs nanowire MOSFETs
- Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Effects of crystal phase mixing on the electrical properties of InAs nanowires
- Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
- High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- Inverter circuits based on vertical InAs nanowire MOSFETs
- Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- 2010
- Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
- High Frequency Performance of Vertical InAs Nanowire MOSFET
- Laboratory instructions as a cause of student dissonance
- Low-frequency noise in vertical InAs nanowire FETs
- Vertical InAs nanowire wrap gate transistors for integration on a Si platform
- Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
