Erik Lind
Titel
Universitetslektor
Organisation
046-2224888
Erik [dot] Lind [at] eit [dot] lth [dot] se
Publikationer (hämtat ur Lunds universitets publikationsdatabas)
författare
- 2013
- 2012
- A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
- Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
- High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
- High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- High-Performance InAs Nanowire MOSFETs
- High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
- In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
- Performance Evaluation of III–V Nanowire Transistors
- Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
- 2011
- 15 nm diameter InAs nanowire MOSFETs
- 60 GHz impulse radio measurements
- Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode
- Design of RF Properties for Vertical Nanowire MOSFETs
- High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- Impulse-based 4 Gbit/s radio link at 60 GHz
- Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
- Inverter circuits based on vertical InAs nanowire MOSFETs
- Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
- RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
- Temperature and annealing effects on InAs nanowire MOSFETs
- Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
- Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- 2010
- 60 GHz Wavelet Generator for Impulse Radio Applications
- A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
- A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
- Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
- Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
- Coherent V-Band Pulse Generator for Impulse Radio BPSK
- Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
- High Frequency Performance of Vertical InAs Nanowire MOSFET
- High-k oxides on (100), (111)A and (111)B InAs substrates
- III-V Nanowires-Extending a Narrowing Road
- Low-frequency noise in vertical InAs nanowire FETs
- Modelling and optimization of III/V transistors with matrices of nanowires
- Oscillator for 60 GHz Super Regenerative Receiver
- Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
- Temperature dependent properties of InSb and InAs nanowire field-effect transistors
- Tunneling-based devices and circuits
- Vertical InAs nanowire wrap gate transistors for integration on a Si platform
- Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
- 2009
- 20 GHz Wavelet Generator Using a Gated Tunnel Diode
- 20 GHz gated tunnel diode based UWB pulse generator
- 60 GHz Ultra-Wideband Impulse Radio Transmitter
- 60 GHz Wavelet Generator for Impulse Radio Applications
- 60 GHz Wavelet Generator for Impulse Radio Applications
- Band Structure Effects on the Scaling Properties of 111 InAs Nanowire MOSFETs
- Gated tunnel diode in oscillator applications with high frequency tuning
- 2008
- 2007
- 2006
- 2005
- A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
- InAs epitaxial lateral overgrowth of W masks
- MOVPE of InAs epitaxial overgrowth of W masks
- Wrap-gated InAs nanowire field effect transistor
- Wrap-gated InAs nanowire field-effect transistor
- 2004
- Design of resonant tunneling permeable base transistors
- Nanoelectronic pulse generators based on gated resonant tunnelling diodes
- Resonant tunneling permeable base transistor based pulsed oscillator
- Resonant tunneling permeable base transistor based pulsed oscillator
- Resonant tunneling permeable base transistors with high transconductance
- SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
- Tunneling Based Electronic Devices
- 2003
- 2002
- A resonant tunneling permeable base transistor with Al-free tunneling barriers
- Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
- Circuits and devices with integrated VFETs and RTDs
- Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
- Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
- Three-dimensional integrated resonant tunneling transistor with multiple peaks
