In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
Författare
Summary, in English
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Publiceringsår
2010
Språk
Engelska
Sidor
264-270
Publikation/Tidskrift/Serie
Nano Reseach
Volym
3
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
Springer
Ämne
- Chemical Sciences
- Condensed Matter Physics
Nyckelord
- MOVPE
- photoluminescence
- in situ etching
- nanowire growth
Status
Published
Forskningsgrupp
- Nanometer structure consortium (nmC)
ISBN/ISSN/Övrigt
- ISSN: 1998-0124