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Nano-Schottky Contacts Realized by Bottom-up Technique

In English

Författare

Summary, in English

Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

Publiceringsår

2010

Språk

Engelska

Sidor

252-253

Publikation/Tidskrift/Serie

INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2

Dokumenttyp

Konferensbidrag

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Condensed Matter Physics

Conference name

3rd IEEE International Nanoelectronics Conference

Conference date

2010-01-03 - 2010-01-08

Conference place

Hong Kong, China

Status

Published