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Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn) As nanostructures

In English

Författare

  • Tadeusz Wosinski
  • Tadeusz Figielski
  • Andrzej Morawski
  • Andrzej Makosa
  • Viktor Osinniy
  • Jerzy Wrobel
  • Janusz Sadowski

Summary, in English

Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three nanowires joined in one point, formed in the epitaxial layer of a ferromagnetic (Ga, Mn) As semiconductor. The effect, in which the zero-field resistance of a pair of nanowires depends on the direction of the previously applied magnetic field, results from a rearrangement of magnetic domain walls, contributing an extra resistance, between different pairs of nanowires in the structure. Two-state behaviour of the nanostructure resistance provides its usefulness for applications in non-volatile memory devices.

Publiceringsår

2008

Språk

Engelska

Sidor

111-114

Publikation/Tidskrift/Serie

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Volym

19

Dokumenttyp

Konferensbidrag

Förlag

Springer

Ämne

  • Natural Sciences
  • Physical Sciences

Conference name

12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

Conference date

2007-09-09 - 2007-09-13

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0957-4522