MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Författare
Summary, in English
We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.
Publiceringsår
2013
Språk
Engelska
Sidor
43-48
Publikation/Tidskrift/Serie
Journal of Crystal Growth
Volym
374
Fulltext
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Condensed Matter Physics
Nyckelord
- A1. Crystal structure
- A3. Metalorganic chemical vapor deposition
- A3. Organometallic vapor phase epitaxy
- B1. Nanomaterials
- B1. Antimonides
- B3. Heterojunction semiconductor devices.
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0022-0248