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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

In English

Författare

Summary, in English

This paper presents DC and RF characterization as

well as modeling of vertical InAs nanowire MOSFETs with LG =

200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS =

0.5 V show that high transconductance (gm = 1.37 mS/μm), high

drive current (IDS = 1.34 mA/μm), and low on-resistance (RON =

287 Ωμm) can be realized using vertical InAs nanowires on Si

substrates. By measuring the 1/f-noise, the gate area normalized

gate voltage noise spectral density, SVG·LG·WG, is determined to

be lowered one order of magnitude compared to similar devices

with a high-κ film consisting of HfO2 only. Additionally, with a

virtual source model we are able to determine the intrinsic

transport properties. These devices (LG = 200 nm) show a high

injection velocity (vinj = 1.7·107 cm/s) with a performance

degradation for array FETs predominantly due to an increase in

series resistance.

Publiceringsår

2013

Språk

Engelska

Sidor

2761-2767

Publikation/Tidskrift/Serie

IEEE Transactions on Electron Devices

Volym

60

Issue

9

Dokumenttyp

Artikel i tidskrift

Förlag

IEEE - Institute of Electrical and Electronics Engineers Inc.

Ämne

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Nyckelord

  • MOSFET
  • RF
  • InAs
  • Nanowire (NW)

Status

Published

Projekt

  • EIT_WWW Wireless with Wires

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 0018-9383