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Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence

In English

Författare

Summary, in English

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Publiceringsår

2013

Språk

Engelska

Sidor

427-428

Publikation/Tidskrift/Serie

Physics of Semiconductors

Volym

1566

Dokumenttyp

Konferensbidrag

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics
  • Nano Technology

Nyckelord

  • nanowire
  • wrap-gate
  • photoluminescence
  • InP
  • ITO

Conference name

31st International Conference on the Physics of Semiconductors (ICPS)

Conference date

2012-07-29 - 2012-08-03

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0094-243X
  • ISSN: 1551-7616