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Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.

  • Ruisheng Liu (Ph.D student)
  • L Michalak
  • C Canali
  • Lars Samuelson
  • H Pettersson
Publiceringsår: 2008
Språk: Engelska
Sidor: 848-852
Publikation/Tidskrift/Serie: Nano letters
Volym: 8
Nummer: 3
Dokumenttyp: Artikel
Förlag: American Chemical Society


We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlO x /Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.



  • Physics and Astronomy


  • ISSN: 1530-6984

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