Du är här

Reduced impact of induced gate noise on inductively degenerated LNAs in deep submicron CMOS technologies

Författare:
Publiceringsår: 2005
Språk: Engelska
Sidor: 31-36
Publikation/Tidskrift/Serie: Analog Integrated Circuits and Signal Processing
Volym: 42
Nummer: 1
Dokumenttyp: Artikel

Sammanfattning

Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used.

Disputation

Nyckelord

  • Technology and Engineering

Övrigt

Published
Yes
  • ISSN: 0925-1030

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen

LERU logo U21 logo