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Dissociative NH3 adsorption on the Si(100)2 × 1 surface at 300 K

Publiceringsår: 1991
Språk: Engelska
Sidor: 353-356
Publikation/Tidskrift/Serie: Surface Science
Volym: 241
Nummer: 3
Dokumenttyp: Artikel
Förlag: Elsevier Science


High resolution electron energy loss spectroscopy has been used to determine how NH3 adsorbs on the Si(100)2 × 1 surface at 300 K. We find that the NH3 molecules dissociate into NH2 and H on adsorption. Combination bands, overtones and double losses for the Si---NH2 group are observed. An anneal to 800 K is sufficient to dissociate the adsorbed NH2 groups while the majority of the Si---H bonds remain intact. An anneal to 1100 K is enough to break the Si-H bonds and start the formation of silicon nitride.



  • Physics and Astronomy


  • Electromagnetic theory
  • ISSN: 0039-6028

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