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Dissociative H2O adsorption on the Si (100) 2× 1 and Ge (100) 2× 1 surfaces

Författare:
Publiceringsår: 1991
Språk: Engelska
Sidor: 297-300
Publikation/Tidskrift/Serie: Vacuum
Volym: 42
Nummer: 4
Dokumenttyp: Artikel
Förlag: Elsevier

Sammanfattning

Core-level spectroscopy and valence band photoelectron spectroscopy were used to study H2O adsorption on the Si(100) and Ge(100) surfaces. We find that H2O dissociates into H and OH on both surfaces at 300 K. The H and OH are adsorbed in on top positions on the surface. The OH group is tilted with respect to the surface normal on the Si(100) surface. We consider two possible interpretations for the results from the H2O dosed Ge(100) surface at 300 K. Either a similar model as for the Si(100) surface or a model based on two adsorption sites.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • Electromagnetic theory
  • ISSN: 0042-207X

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