Dissociative H2O adsorption on the Si (100) 2× 1 and Ge (100) 2× 1 surfaces
Core-level spectroscopy and valence band photoelectron spectroscopy were used to study H2O adsorption on the Si(100) and Ge(100) surfaces. We find that H2O dissociates into H and OH on both surfaces at 300 K. The H and OH are adsorbed in on top positions on the surface. The OH group is tilted with respect to the surface normal on the Si(100) surface. We consider two possible interpretations for the results from the H2O dosed Ge(100) surface at 300 K. Either a similar model as for the Si(100) surface or a model based on two adsorption sites.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Electromagnetic theory
- ISSN: 0042-207X