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InAs nanowire metal-oxide-semiconductor capacitors

Publiceringsår: 2008
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 92
Nummer: 25
Dokumenttyp: Artikel
Förlag: American Institute of Physics


We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.



  • Condensed Matter Physics


  • European Union
  • Knut och Alice Wallenbergs Stiftelse
  • Stiftelsen för Strategisk Forskning
  • Vetenskapsrådet
  • Linne Center for Nanoscience and Quantum Engineering
  • Nano
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters vol 92, 253509 (2008) and may be found at
  • ISSN: 0003-6951

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