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Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Publiceringsår: 2008
Språk: Engelska
Sidor: 305201-6 pp
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 19
Nummer: 30
Dokumenttyp: Artikel
Förlag: IOP Publishing


Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.



  • Physics and Astronomy


  • ISSN: 0957-4484

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