Confinement properties of a Ga0.25In0.75As/InP quantum point contact
Författare
Summary, in English
We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.
Avdelning/ar
Publiceringsår
2008
Språk
Engelska
Sidor
5-155309
Publikation/Tidskrift/Serie
Physical Review B (Condensed Matter and Materials Physics)
Volym
77
Issue
15
Dokumenttyp
Artikel i tidskrift
Förlag
American Physical Society
Ämne
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1098-0121