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Confinement properties of a Ga0.25In0.75As/InP quantum point contact

Författare:
Publiceringsår: 2008
Språk: Engelska
Sidor: 155309-5 pp
Publikation/Tidskrift/Serie: Physical Review B
Volym: 77
Nummer: 15
Dokumenttyp: Artikel
Förlag: American Physical Society

Sammanfattning

We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1098-0121

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