Confinement properties of a Ga0.25In0.75As/InP quantum point contact
Sidor: 155309-5 pp
Publikation/Tidskrift/Serie: Physical Review B
Förlag: American Physical Society
We study the electrostatic confinement properties of a ballistic GaInAs nanostructure, a system with a high potential for quantum applications due to its small effective mass and persistence of quantum effects to higher temperatures. By measuring the magnetic depopulation of one-dimensional subbands in an etched quantum point contact, we demonstrate that the slope of the confinement at the Fermi level is an order of magnitude steeper than in surface-gated devices, indicating that this system is ideal for applications that are sensitive to the boundary geometry of devices. The subband spacing is found to range from 7 to 9.5 meV, which is significantly larger than previously reported for this material system.
- Condensed Matter Physics
- ISSN: 1098-0121