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Electrical properties of self-assembled branched InAs nanowire junctions

In English

Författare

Summary, in English

We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.

Publiceringsår

2008

Språk

Engelska

Sidor

1100-1104

Publikation/Tidskrift/Serie

Nano Letters

Volym

8

Issue

4

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992