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A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF CMOS

Publiceringsår: 2006
Språk: Engelska
Sidor: 387-390
Publikation/Tidskrift/Serie: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Dokumenttyp: Konferensbidrag


The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.



  • Electrical Engineering, Electronic Engineering, Information Engineering


  • Elektronikkonstruktion
"©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."
  • ISBN: 0-7803-9472-0

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