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Selective etching of III-V nanowires for molecular junctions

Författare:
  • Christian Kallesoe
  • Kristian Molhave
  • Thomas Mårtensson
  • Torben Mikael Hansen
  • Lars Samuelson
  • Peter Boggild
Publiceringsår: 2008
Språk: Engelska
Sidor: 1179-1181
Publikation/Tidskrift/Serie: Microelectronic Engineering
Volym: 85
Nummer: 5-6
Dokumenttyp: Artikel
Förlag: Elsevier B.V.

Sammanfattning

Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.

Disputation

Nyckelord

  • Technology and Engineering
  • molecular junction
  • III-V
  • nanowires
  • selective etching

Övrigt

Published
Yes
  • ISSN: 0167-9317

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