Development of a Vertical Wrap-Gated InAs FET
Författare
Summary, in English
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
Publiceringsår
2008
Språk
Engelska
Sidor
3030-3036
Publikation/Tidskrift/Serie
IEEE Transactions on Electron Devices
Volym
55
Issue
11
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Nyckelord
- nanowire
- Field-effect transistor (FET)
- InAs
- wrap gate
- surround gate
Status
Published
Forskningsgrupp
- Nano
ISBN/ISSN/Övrigt
- ISSN: 0018-9383