Influence of Ion Implantation on Magnetic, Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
Publikation/Tidskrift/Serie: ACTA PHYSICA POLONICA A
Förlag: POLISH ACAD SCIENCES INST PHYSICS
We performed implantation experiments; applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen and neon implantation.
- Technology and Engineering
37th International School on the Physics of Semiconducting Compounds
- ISSN: 0587-4246