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Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures

Författare:
Publiceringsår: 2008
Språk: Engelska
Sidor: 1097-1104
Publikation/Tidskrift/Serie: Materials Sceince - Poland
Volym: 26
Nummer: 4
Dokumenttyp: Konferensbidrag
Förlag: Oficyny Wydawniczej Politechniki Wrocławskiej

Sammanfattning

Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.

Disputation

Nyckelord

  • Technology and Engineering
  • nanostructure
  • ferromagnetic semiconductor
  • magnetoresistance
  • domain wall

Övriga

4th MAG-EL-MAT Members Meeting 2006
2014-05-04
Bellewo, POLAND
Published
Yes
  • ISSN: 0137-1339

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