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Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures

In English

Författare

  • T. Wosinski
  • T. Figielski
  • A. Morawski
  • A. Makosa
  • R. Szymczak
  • J. Wrobel
  • Janusz Sadowski

Summary, in English

Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.

Publiceringsår

2008

Språk

Engelska

Sidor

1097-1104

Publikation/Tidskrift/Serie

Materials Sceince - Poland

Volym

26

Issue

4

Dokumenttyp

Konferensbidrag

Förlag

Oficyny Wydawniczej Politechniki Wrocławskiej

Ämne

  • Physical Sciences
  • Natural Sciences

Nyckelord

  • nanostructure
  • ferromagnetic semiconductor
  • magnetoresistance
  • domain wall

Conference name

4th MAG-EL-MAT Members Meeting 2006

Conference date

2006-05-03 - 2006-05-06

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 2083-134X
  • ISSN: 0137-1339