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Low temperature Ga surface diffusion from focused ion beam milled grooves.

Publiceringsår: 2009
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 20
Nummer: 32
Dokumenttyp: Artikel
Förlag: Institute of Physics

Sammanfattning

Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1361-6528

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