Javascript verkar inte påslaget? - Vissa delar av Lunds universitets webbplats fungerar inte optimalt utan javascript, kontrollera din webbläsares inställningar.
Du är här

Substrate orientation: a way towards higher quality monolayer graphene growth on 6H-SiC(0001)

  • C. Virojanadara
  • R. Yakimova
  • J.R. Osiecki
  • M. Syväjärvi
  • R.I.G. Uhrberg
  • L.I. Johansson
  • Alexei Zakharov
Publiceringsår: 2009
Språk: Engelska
Sidor: L87-L90
Publikation/Tidskrift/Serie: Surface Science
Volym: 603
Nummer: 15
Dokumenttyp: Artikel
Förlag: Elsevier B.V


The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene–SiC structures.



  • Natural Sciences
  • Physical Sciences


  • ISSN: 0039-6028

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen