Microphotoluminescence studies of tunable wurtzite InAs0.85P0.15 quantum dots embedded in wurtzite InP nanowires

In English We have investigated the effects of strong confinement in wurtzite InAs0.85P0.15 quantum dots embedded in wurtzite InP nanowires using microphotoluminescence spectroscopy. Strain-dependent k . p calculations were used to model the quantum dots, and it was found that the electron effective mass was increased by a factor of 2 and the band gap was increased by 190 meV compared to equivalent quantum dots in the zinc-blende polytype. Measurements indicate that there is a relaxation bottleneck giving rise to an anomalous state filling behavior.