Publikationer
Improved breakdown voltages for type I InP/InGaAs DHBTs
Avdelning/ar:
Publiceringsår: 2008
Språk: Engelska
Sidor: 504-507
Publikation/Tidskrift/Serie: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Dokumenttyp: Konferensbidrag
Förlag: IEEE
Sammanfattning
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
Disputation
Nyckelord
- Physics and Astronomy
- InP heterojunction bipolar transistor
Övrigt
20th International Conference on Indium Phosphide and Related Materials
2013-05-27
Versailles, France
Published
Yes
- Nano
- ISSN: 1092-8669
