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Improved breakdown voltages for type I InP/InGaAs DHBTs

Författare:
Publiceringsår: 2008
Språk: Engelska
Sidor: 504-507
Publikation/Tidskrift/Serie: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.

Disputation

Nyckelord

  • Physics and Astronomy
  • InP heterojunction bipolar transistor

Övriga

20th International Conference on Indium Phosphide and Related Materials
2014-05-27
Versailles, France
Published
Yes
  • Nano
  • ISSN: 1092-8669

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