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MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures

Publiceringsår: 2009
Språk: Engelska
Sidor: 249-252
Publikation/Tidskrift/Serie: 2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

21st International Conference on Indium Phosphide and Related Materials
2014-05-11
Newport Beach, CA, United States
Published
Yes
  • Nano
  • ISSN: 1092-8669

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