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Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching

Publiceringsår: 2009
Språk: Engelska
Sidor: 901-903
Publikation/Tidskrift/Serie: Acta Physica Polonica A
Volym: 116
Nummer: 5
Dokumenttyp: Konferensbidrag
Förlag: Polish Acad Sciences Inst Physics


We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.



  • Natural Sciences
  • Physical Sciences


4th Workshop on Quantum Chaos and Localisation Phenomena
Warsaw, Poland
  • ISSN: 0587-4246

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