Meny

Du är här

III/V Nanowire FETs for CMOS?

Publiceringsår: 2008
Språk: Engelska
Sidor: 741-743
Publikation/Tidskrift/Serie: Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices
Volym: 16
Nummer: 10
Dokumenttyp: Konferensbidrag
Förlag: Electrochemical Society Inc

Sammanfattning

III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for the use of nanowires in CMOS applications.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

3rd International SiGe, Ge, and Related Compounds Symposium
2014-10-13
Honolulu, HI, USA
Published
Yes
  • Nano
  • ISSN: 1938-5862

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen