As3d core level studies of (GaMn)As annealed under As capping
Författare
Summary, in English
The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Sidor
125-128
Publikation/Tidskrift/Serie
Surface Science
Volym
604
Issue
2
Dokumenttyp
Artikel i tidskrift
Förlag
Elsevier
Ämne
- Physical Sciences
- Natural Sciences
Nyckelord
- Post-growth annealing
- (GaMn)As
- Core level photoemission
- As3d spectrum
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0039-6028