Meny

Du är här

As3d core level studies of (GaMn)As annealed under As capping

Författare:
  • Intikhab Ulfat
  • Johan Adell
  • J. Sadowski
  • L. Ilver
  • J. Kanski
Publiceringsår: 2010
Språk: Engelska
Sidor: 125-128
Publikation/Tidskrift/Serie: Surface Science
Volym: 604
Nummer: 2
Dokumenttyp: Artikel
Förlag: Elsevier Science BV

Sammanfattning

The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.

Disputation

Nyckelord

  • Physics and Astronomy
  • Post-growth annealing
  • (GaMn)As
  • Core level photoemission
  • As3d spectrum

Övriga

Published
Yes
  • ISSN: 0039-6028

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen