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Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor: 1280-1286
Publikation/Tidskrift/Serie: Nano letters
Volym: 10
Nummer: 4
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • ISSN: 1530-6992

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