Low-frequency noise in vertical InAs nanowire FETs
Författare
Summary, in English
This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
Avdelning/ar
Publiceringsår
2010
Språk
Engelska
Sidor
428-430
Publikation/Tidskrift/Serie
IEEE Electron Device Letters
Volym
31
Issue
5
Fulltext
- Available as PDF - 189 kB
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Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- nanowire (NW)
- InAs
- FET
- flicker noise
Status
Published
Forskningsgrupp
- Nano
- Digital ASIC
- Analog RF
ISBN/ISSN/Övrigt
- ISSN: 0741-3106