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Low-frequency noise in vertical InAs nanowire FETs

Publiceringsår: 2010
Språk: Engelska
Sidor: 428-430
Publikation/Tidskrift/Serie: IEEE ELECTRON DEVICE LETTERS
Volym: 31
Nummer: 5
Dokumenttyp: Artikel
Förlag: IEEE


This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).



  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
  • nanowire (NW)
  • InAs
  • FET
  • flicker noise


  • Nano
  • Digital ASIC
  • Analog RF
Copyright 2010 IEEE Electron Device Letters (EDL). This file is the final submitted version; the published version can be found in the alternative URL. This article may be downloaded for personal use only. Any other use requires prior permission of the author and IEEE.
  • ISSN: 0741-3106

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