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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor: 52-57
Publikation/Tidskrift/Serie: Journal of Electron Spectroscopy and Related Phenomena
Volym: 177
Nummer: 1
Dokumenttyp: Artikel
Förlag: Elsevier Science BV

Sammanfattning

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

Disputation

Nyckelord

  • Physics and Astronomy
  • Indium
  • arsenide (InAs)
  • Indium antimonide (InSb)
  • Surface reconstruction
  • Ab initio calculations
  • spectroscopy
  • Surface core-level shift (SCLS)
  • Synchrotron radiation photoelectron

Övriga

Published
Yes
  • ISSN: 0368-2048

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