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Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Publiceringsår: 2010
Språk: Engelska
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 96
Nummer: 15
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

Disputation

Nyckelord

  • Physics and Astronomy
  • field effect transistors
  • nanowires

Övriga

Published
Yes
  • Nano
  • ISSN: 0003-6951

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