Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Publikation/Tidskrift/Serie: Applied Physics Letters
Förlag: American Institute of Physics
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
- Physics and Astronomy
- field effect transistors
- ISSN: 0003-6951