Defect Structure of High-Temperature-Grown GaMnSb/GaSb
Publikation/Tidskrift/Serie: Acta Physica Polonica A
Förlag: Polisch Academy of Sciences
GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
- Physical Sciences
- Natural Sciences
8th National Meeting of the Synchrotron Radiation Users
- ISSN: 0587-4246