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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 96
Nummer: 23
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. doi:10.1063/1.3449559

Disputation

Nyckelord

  • Physics and Astronomy

Övrigt

Published
Yes
  • Nano
  • ISSN: 0003-6951

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