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Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

In English

Författare

Summary, in English

We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]

Publiceringsår

2010

Språk

Engelska

Publikation/Tidskrift/Serie

Applied Physics Letters

Volym

96

Issue

23

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 0003-6951