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Crystal Phase Engineering in Single InAs Nanowires.

In English

Författare

Summary, in English

Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems.

Publiceringsår

2010

Språk

Engelska

Sidor

3494-3499

Publikation/Tidskrift/Serie

Nano Letters

Volym

10

Issue

9

Dokumenttyp

Artikel i tidskrift

Förlag

The American Chemical Society (ACS)

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1530-6992