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Low power multi-band CMOS receiver front-end

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor: 4
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well
below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.

Disputation

Nyckelord

  • Technology and Engineering
  • capacitive cross coupling
  • multi-band
  • LNA
  • mixer

Övriga

PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics
2010-07-18/2010-07-21
Berlin, Germany
Published
Yes
  • Elektronikkonstruktion
  • Analog RF
  • Data converters & RF

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