A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

In English This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.