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A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

Publiceringsår: 2010
Språk: Engelska
Sidor: 4
Dokumenttyp: Konferensbidrag

Sammanfattning

This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.

Disputation

Nyckelord

  • Technology and Engineering
  • impedance matching
  • Low Noise Amplifier
  • CMOS
  • Mixer
  • LNA
  • inductorless
  • ultra low power
  • Front-end

Övriga

NORCHIP
2010-11-15/2010-11-16
Tampere, Finland
  • Stiftelsen för Strategisk Forskning
Published
  • EIT_UPD Wireless Communication for Ultra Portable Devices
Yes
  • Analog RF

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