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Nano-Schottky Contacts Realized by Bottom-up Technique

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor: 252-253
Publikation/Tidskrift/Serie: INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2
Dokumenttyp: Konferensbidrag
Förlag: IEEE

Sammanfattning

Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

3rd IEEE International Nanoelectronics Conference
2014-01-04
Hong Kong, China
Published
Yes

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