Du är här

Growth Mechanism of Self-Catalyzed Group III-V Nanowires.

Författare:
Publiceringsår: 2010
Språk: Engelska
Sidor: 4443-4449
Publikation/Tidskrift/Serie: Nano Letters
Volym: 10
Nummer: Online October 7, 2010
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

Disputation

Nyckelord

  • Technology and Engineering

Övrigt

Published
Yes
  • Nanometer structure consortium (nmC)
  • Digital ASIC
  • Nano
  • ISSN: 1530-6992

Box 117, 221 00 LUND
Telefon 046-222 00 00 (växel)
Telefax 046-222 47 20
lu [at] lu [dot] se

Fakturaadress: Box 188, 221 00 LUND
Organisationsnummer: 202100-3211
Om webbplatsen

LERU logo U21 logo