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Doping Incorporation in InAs nanowires characterized by capacitance measurements

Publiceringsår: 2010
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Journal of Applied Physics
Volym: 108
Dokumenttyp: Artikel
Förlag: American Institute of Physics

Sammanfattning

Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.

Disputation

Nyckelord

  • Physics and Astronomy
  • III-V semiconductors
  • MISFET
  • nanowires
  • semiconductor doping

Övrigt

  • Knut och Alice Wallenbergs Stiftelse
Published
Yes
  • Nano
  • ISSN: 0021-8979

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