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Transient studies on InAs/HfO2 nanowire capacitors

Författare:
Publiceringsår: 2011
Språk: Engelska
Sidor:
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 98
Nummer: 1
Dokumenttyp: Artikel
Förlag: Amer Inst Physics

Sammanfattning

Single-shot transients and deep-level transient spectroscopy are used to investigate the origins of capacitance hysteresis in n-doped InAs nanowire/HfO2 capacitors. Capacitance transients with a characteristic time in the order of 100 mu s are attributed to emission from electron traps, located in the oxide film. The trap energy is determined to be in the range from 0.12 to 0.17 eV with capture cross-sections of about 1.7 x 10(-17) cm(-2). The capture is measured to be shorter than 100 ns with no sign of capture barrier. Under the reverse bias, the transients show a reduced emission rate indicating a minority carrier assisted complex dynamics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3533379]

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • Nano
  • ISSN: 0003-6951

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