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High Frequency Performance of Vertical InAs Nanowire MOSFET

Publiceringsår: 2010
Språk: Engelska
Publikation/Tidskrift/Serie: 2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)
Dokumenttyp: Konferensbidrag
Förlag: IEEE


We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.



  • Technology and Engineering


22nd International Conference on Indium Phosphide and Related Materials
MAY 31-JUN 04, 2010
Kagawa, JAPAN
  • Analog RF
  • Digital ASIC
  • Nano
  • ISSN: 1092-8669

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