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Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

Publiceringsår: 2011
Språk: Engelska
Publikation/Tidskrift/Serie: Journal Of Physics-Condensed Matter
Volym: 23
Nummer: 8
Dokumenttyp: Artikel
Förlag: IOP Publishing Ltd


Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.



  • Physics and Astronomy


  • ISSN: 0953-8984

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