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Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Publiceringsår: 2011
Språk: Engelska
Sidor: 2028-2031
Publikation/Tidskrift/Serie: Nano Letters
Volym: 11
Nummer: 5
Dokumenttyp: Artikel
Förlag: American Chemical Society

Sammanfattning

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

Disputation

Nyckelord

  • Physics and Astronomy

Övriga

Published
Yes
  • Nanometer structure consortium (nmC)
  • ISSN: 1530-6992

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