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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

  • J. J. K. Lang
  • P. Laukkanen
  • M. P. J. Punkkinen
  • M. Ahola-Tuomi
  • M. Kuzmin
  • V. Tuominen
  • J. Dahl
  • M. Tuominen
  • R. E. Perala
  • Karina Schulte
  • Johan Adell
  • J. Sadowski
  • J. Kanski
  • M. Guina
  • M. Pessa
  • K. Kokko
  • B. Johansson
  • L. Vitos
  • I. J. Vayrynen
Publiceringsår: 2011
Språk: Engelska
Sidor: 883-888
Publikation/Tidskrift/Serie: Surface Science
Volym: 605
Nummer: 9-10
Dokumenttyp: Artikel
Förlag: Elsevier Science BV


Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases. (C) 2011 Elsevier B.V. All rights reserved.



  • Natural Sciences
  • Physical Sciences
  • Ab initio calculations
  • Scanning-tunneling microscopy
  • Synchrotron
  • radiation photoelectron spectroscopy
  • Surface reconstruction
  • Gallium-arsenide (GaAs)
  • Indium-arsenide (InAs)
  • Single crystal surfaces


  • ISSN: 0039-6028

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