Webbläsaren som du använder stöds inte av denna webbplats. Alla versioner av Internet Explorer stöds inte längre, av oss eller Microsoft (läs mer här: * https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Var god och använd en modern webbläsare för att ta del av denna webbplats, som t.ex. nyaste versioner av Edge, Chrome, Firefox eller Safari osv.

Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.

Författare

Summary, in English

Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed.

Publiceringsår

2011

Språk

Engelska

Publikation/Tidskrift/Serie

Nanotechnology

Volym

22

Issue

26

Dokumenttyp

Artikel i tidskrift

Förlag

IOP Publishing

Ämne

  • Nano Technology

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 0957-4484